SAMSUNG TO BRING ASML HIGH-NA EUV INTO DRAM PRODUCTION BY 2028 Samsung plans to use ASML High-NA EUV in future high-volume DRAM manufacturing by 2028, which the companies say would be an industry first. Samsung is also joining an effort to move semiconductor photomasks from the industry-standard 6-inch format to 12 inches, aiming to improve fab productivity, lower manufacturing costs and eliminate stitching constraints in High-NA EUV production. The expanded partnership spans both advanced memory and next-generation semiconductor manufacturing. 08-SEP-2026 06:13 AM ET